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| Advance Product Information 6 - 18 GHz High Power Amplifier Key Features and Performance * * * * * * * * Dual Channel Power Amplifier 0.25um pHEMT Technology 6-18 GHz Frequency Range 2.8 W/Channel Midband Pout 5.6 W Pout Combined 25 dB Nominal Gain Balanced In/Out for Low VSWR 8V @ 1.2A per Channel Bias TGA9092-EPU Measured S21 Data 30.00 28.00 26.00 24.00 Gain (dB) 22.00 20.00 18.00 Mean 16.00 14.00 12.00 10.00 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 +1std -1std TGA9092-EPU Primary Applications * * * X-Ku band Power Point-to-Point Radio VSAT Frequency (GHz) Typical Measured Small Signal Gain TGA9092-EPU Average Pout RF Probe Data 36.00 34.00 32.00 Pout (dBm) 30.00 28.00 26.00 24.00 22.00 20.00 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Chip Dimensions 4.32mm x 5.64mm x 0.100mm Typical Measured Pout (RF Probe) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com 1 Advance Product Information Table I RECOMMENDED MAXIMUM RATINGS Symbol V+ I+ PD PIN TCH TM TSTG 1/ 2/ Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 9V 3.5 A 25 Watts 25 dBm 150 C 320 C -65 to 150 C C Notes 3/ 1/, 2/ These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. Total current for both channels 3/ Table II DC PROBE TESTS (T A = 25 5 C C) Symbol VP1-14 BVGS1 BVGD1-3 Parameter Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain Minimum -1.5 -30 -30 Maximum -0.5 -8 -8 Value V V V Table III ON-WAFER RF PROBE CHARACTERISTICS (T A = 25 5 C C) Symbol Parameter Test Condition Vd=8V, Id=800mA F = 6 to 18 GHz F = 6 to 9 GHz F = 10 to 17 GHz F = 18 Ghz F = 6 to 18 GHz Limit Min Nom 21 25 30 33 30 12 32 34 33 25 Max 31 Units Gp P3dB Small-signal Power Gain Output Power @ 3dB gain compression Power Added Efficiency dB dBm PAE % Note: RF probe data taken at 1GHz steps Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com Advance Product Information TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com Advance Product Information Chip Assembly and Bonding Diagram Reflow process assembly notes: * * * * * AuSn (80/20) solder with limited exposure to temperatures at or above 300 C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: * * * * * * * vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: * * * * * thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com |
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